Process Library

Micro-assembly Process Expert, Packaging Lab Supports Multiple Process Verifications

01

Epoxy Die Bonding

Epoxy Die Bonding

Conductive or non-conductive adhesive is precisely applied to substrate via dispenser, dipping/stamping, or jetting. Chips are picked and placed into adhesive by vacuum nozzle, then thermally cured to form stable interconnects. The most widely used die-attach process.

Epoxy Die Bonding

Key Parameters

  • Adhesive Volume Control
  • Dispensing Pattern / Trajectory
  • Adhesive Viscosity
  • Dispensing Air Pressure
  • Suck-back Amount

Process Advantages

  • Low Contact Stress
  • Low Thermal Load
  • High Process Maturity
  • Strong Adhesive Compatibility
Dispensing Process Conductive Adhesive Coating Thermal Curing Bonding
02

Eutectic Bonding

Eutectic Bonding

Utilizes eutectic alloys (AuSn, AuSi, etc.) as an intermediate layer to form a liquid phase above the eutectic temperature, achieving atomic-level diffusion bonding between chip and substrate for simultaneous electrical and mechanical interconnection.

Eutectic Bonding

Key Parameters

  • Workpiece Stage Temperature
  • Nozzle / Fixture Temperature
  • Heating / Cooling Rate
  • Protective Atmosphere

Process Advantages

  • Hermetic Packaging
  • Lower Bonding Temperature vs. TCB
  • One-Step Electrical & Mechanical Connection
  • Meets Optoelectronic / RF High-Reliability Demands
AuSn Eutectic Atomic-Level Bonding Hermetic Packaging
03

Stamping

Stamping / Dip Transfer

A chip or dedicated stamping head is dipped into an adhesive pool to pick up a controlled amount, then transferred to the target position on the substrate. An efficient adhesive application method with highly uniform bondline thickness, especially suitable for multi-chip synchronous bonding, with precise control of adhesive coverage and fillet height. Key characteristic: area transfer, moderate adhesive volume, uniform coverage.

Stamping

Key Parameters

  • Dipping Depth
  • Dwell Time
  • Adhesive Pool Temperature
  • Transfer Pressure

Process Advantages

  • Highly Uniform Bondline Thickness
  • High-Speed Multi-Chip Synchronous Application
  • Precisely Controllable Adhesive Coverage
  • Extremely Gentle on Thin / Fragile Chips
Area Transfer Thin / Fragile Chips High-Speed Synchronous
04

Pin Transfer

Pin Transfer

A precision pin array quantitatively picks up extremely small adhesive volumes from an adhesive pool, then precisely deposits them onto substrate target positions. A high-precision spot transfer process designed for ultra-small adhesive volume micro-assembly scenarios.

Pin Transfer

Key Parameters

  • Pin Diameter
  • Dipping Depth
  • Transfer Speed
  • Pin Temperature

Process Advantages

  • Minimally Small & Precise Adhesive Volume
  • Excellent Dot-to-Dot Consistency
  • Compatible with Automated High-Speed Micro-Assembly Lines
Spot Transfer Ultra-Small Adhesive Volume Precision Micro-Assembly
05

Die Stacking

Die Stacking

Chips are stacked layer by layer vertically with interlayer adhesive or bonding, maximizing area efficiency and minimizing signal path. A key technology for 3D / SiP packaging.

Die Stacking

Key Parameters

  • Stack Layer Count
  • Interlayer Alignment Accuracy
  • Interlayer Bondline Control
  • Stacking Force Control
  • Adhesive Squeeze-out & Fillet Control
  • Ultra-Thin Chip Handling Strategy

Process Advantages

  • Ultra-High Chip Density, Minimized Footprint
  • Shortest Signal Path, Enhanced Frequency Performance
  • Supports Multi-Layer Heterogeneous Integration
  • Combinable with Flip Chip Technology
3D Integration Vertical Stacking Heterogeneous Packaging
06

Flip Chip Bonding

Flip Chip Bonding

Flip chip bonding is a face-down, area-array interconnection technology where the chip's active surface is connected to substrate pads via bumps, achieving simultaneous electrical and mechanical interconnection. Compared to wire bonding's point-by-point connections, all interconnections are completed simultaneously with shorter signal paths and more compact packaging. Mainstream approaches include reflow, thermocompression bonding, and ultrasonic bonding.

Flip Chip Bonding

Key Parameters

  • Placement Accuracy
  • Bump Type (C4 / Copper Pillar / Gold Stud)
  • Bonding Method (Reflow / TCB / Ultrasonic)
  • Flux Application Volume

Process Advantages

  • Smaller Package: chip area = package area, 30–70% reduction
  • Higher I/O Density: full area-array, thousands of bumps simultaneously
  • Superior Signal Performance: mm to μm interconnect path, drastically reduced parasitic
  • Higher Throughput: all connections simultaneously, independent of pin count
Area-Array Interconnection Bump Bonding High-Density I/O
07

Die Sorting

Die Sorting

Re-arranges chips from wafer or other carrier sources into waffle packs, gel packs, or wafer film for organized feeding to subsequent die bonding operations.

Die Sorting

Key Parameters

  • Sorting Bin Mapping
  • Pick Force Control
  • Sorting Speed
  • Vision Alignment Accuracy

Process Advantages

  • Expanded Feeding Capacity for Multi-Chip Applications
  • Structured Component Layout for Traceability
  • Flexible Carrier Conversion
  • Effectively Improves Bonding Throughput
Wafer Sorting Organized Feeding Carrier Conversion
08

UV Curing

UV Curing

UV-curable adhesive cures within seconds upon ultraviolet irradiation. It remains liquid prior to UV exposure with unlimited pot life, allowing start/stop at any time with no material waste. Curing occurs at room temperature, with minimal thermal stress on substrates—suitable for inline production and temperature-sensitive devices. The adhesive locks components immediately after alignment, minimizing optical drift. Widely used in optical coupling alignment, lens bonding, and other precision assembly applications.

UV Curing

Key Parameters

  • Adhesive Volume Control
  • UV Wavelength (365 / 395 / 405 nm)
  • UV Intensity & Exposure Time

Process Advantages

  • Seconds-Level Curing, No Waiting
  • Cures on Demand — No Adhesive Waste
  • Low Thermal Stress — No Chip Damage or Alignment Drift
  • Precise Adhesive Volume — No Optical Path Contamination
  • Directly Embedded in Die Bonder Line — No Interruption
UV Curing Low-Temperature Process Inline Integration
09

Ultrasonic Bonding

Ultrasonic Bonding

It uses ultrasonic vibration and pressure to friction‑bond the chip to the substrate at room temperature – no heat required. Perfect for delicate components that don’t like heat or are hard to warm up.

Ultrasonic Bonding

Key Parameters

  • Bonding Force / Pressure
  • Ultrasonic Power / Energy
  • Frequency & Amplitude
  • Ultrasonic Application Time

Process Advantages

  • Room Temperature Bonding (optional heating, always lower than TCB)
  • Short Bonding Time
  • Excellent for Temperature-Sensitive Devices
  • One-Step Conductive & Mechanical Connection
Cold Friction Welding Room Temperature Bonding Temperature-Sensitive Devices